ESD7C3.3DT5G【PDF 2/4 页】DIODE ESD PROT 3.3V SOT-723

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ESD7C, SZESD7C SERIES

ELECTRICAL CHARACTERISTICS

(T A = 25 ° C unless otherwise noted)

Symbol Parameter

I PP

Maximum Reverse Peak Pulse Current

V C

Clamping Voltage @ I PP

V RWM

Working Peak Reverse Voltage

I F

I

I R V F

I R

V BR

I T

Maximum Reverse Leakage Current @ V RWM

Breakdown Voltage @ I T

Test Current

V C V BR V RWM

I T

V

I F

V F

Forward Current

Forward Voltage @ I F

P pk

C

Peak Power Dissipation

Max. Capacitance @V R = 0 and f = 1 MHz

I PP

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Uni ? Directional TVS

ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 1.1 V Max. @ I F = 10 mA)

V RWM (V)

I R ( m A) @ V RWM

V BR (V) @ I T

(Note 3)

I T

C (pF)

(Note 4)

C (pF)

(Note 4)

V C

Device (Note 2)

ESD7C3.3DT5G

ESD7C5.0DT5G

Device

Marking

L5

L4

Max

3.3

5.0

Max

1.0

0.5

Min

5.0

11

mA

1.0

1.0

Typ

12

6.0

Max

13

6.2

Per IEC61000 ? 4 ? 2

(Note 5)

Figures 1 and 2

See Below

(Note 6)

2.

3.

4.

5.

6.

Include SZ ? prefix devices where applicable.

V BR is measured with a pulse test current I T at an ambient temperature of 25 ° C.

Capacitance of one diode at f = 1 MHz, V R = 0 V, T A = 25 ° C.

For test procedure see Figures 3 and 4 and Application Note AND8307/D.

ESD7C5.0DT5G shown below. Other voltages available upon request.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000 ? 4 ? 2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000 ? 4 ? 2

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